Display device and method of manufacturing the same

ABSTRACT

A method of manufacturing a display device including the steps of providing a lower substrate having a display area and a pad area, forming a display structure in the display area of the lower substrate, forming pad electrodes in the pad area of the lower substrate to be spaced apart from each other in a first direction parallel to a top surface of the lower substrate, forming an upper substrate on the display structure to face the lower substrate in the display area, forming a conductive film member including a non-cured resin layer and conductive balls arranged in a lattice shape on the pad electrodes, the non-cured resin layer overlapping the pad electrodes, and forming a film package on the non-cured resin layer, the film package including bump electrodes overlapping the pad electrodes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. patent application Ser. No.16/790,354 filed on Feb. 13, 2020, which claims priority from and thebenefit of Korean Patent Application No. 10-2019-0074461, filed on Jun.21, 2019, each of which is hereby incorporated by reference for allpurposes as if fully set forth herein.

BACKGROUND Field

Exemplary embodiments of the invention relate generally to a displaydevice and a method of manufacturing a display device, and morespecifically, a display device including a conductive film member and amethod of manufacturing the same.

Description of the Background

Flat panel display devices are used as display devices, and have beenreplacing cathode ray tube display devices due to lightweight and thincharacteristics thereof. Flat panel display devices typically includeliquid crystal display devices and organic light emitting diode displaydevices.

A display device may include an upper substrate and a lower substrate,and a plurality of pad electrodes connected to an external device may bedisposed on the lower substrate. For example, as the size of the displaydevice increases and the resolution of the display device increases, thenumber of signals input to the display device may be increased. As such,the display device may include a relatively large number of padelectrodes to receive the signals from the external device. In order toarrange the relatively large number of pad electrodes in a limitedspace, an interval between the pad electrodes may become relativelynarrow.

In order for the pad electrodes to be electrically connected to theexternal device, the display device may further include an anisotropicconductive film and a flexible printed circuit board, which are disposedon the pad electrodes. The anisotropic conductive film may includeconductive balls and a resin layer covering the conductive balls, andhas a relatively thick thickness. The flexible printed circuit board mayinclude bump electrodes overlapping the pad electrodes. The anisotropicconductive film may have a configuration, in which the conductive ballsare irregularly arranged in one layer, or in which the conductive ballsoverlap each other in a plurality of layers in a depth direction. Inaddition, in a process of curing the anisotropic film, when the flexibleprinted circuit board applies a pressure to the anisotropic conductivefilm in the depth direction, a relatively large amount of the resinlayer may be reflowed due to the relatively thick resin layer. In thiscase, the density of the conductive balls may become less uniform, whichmay cause adjacent pad electrodes or adjacent bump electrodes to beshort-circuited by the conductive balls.

The above information disclosed in this Background section is only forunderstanding of the background of the inventive concepts, and,therefore, it may contain information that does not constitute priorart.

SUMMARY

Display devices constructed according to exemplary embodiments of theinvention and a method of manufacturing the same include a conductivefilm member.

Additional features of the inventive concepts will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the inventive concepts.

A display device according to an exemplary embodiment includes a lowersubstrate having a display area and a pad area, a display structuredisposed in the display area of the lower substrate, an upper substratedisposed on the display structure in the display area, and facing thelower substrate, pad electrodes disposed in the pad area of the lowersubstrate and spaced apart from each other in a first direction parallelto a top surface of the lower substrate, a conductive film memberincluding conductive balls disposed on the pad electrodes, theconductive film member having a first area overlapping the padelectrodes and a second area not overlapping the pad electrodes, and afilm package disposed on the conductive film member and including bumpelectrodes overlapping the first area of the conductive film member, inwhich the shape of the conductive balls disposed in the first area isdifferent from those disposed in the second area.

The conductive balls may be arranged in the first direction and a seconddirection orthogonal to the first direction, and be spaced apart fromeach other at equidistant intervals.

The conductive balls may not overlap each other in a third directionperpendicular to the first and second directions.

The conductive balls may include first conductive balls disposed in thefirst area, and second conductive balls disposed in the second area, anda diameter of each of the first conductive balls in a third directionperpendicular to the first and second directions may be less than adiameter of each of the second conductive balls in the third direction.

A portion of each of the first conductive balls may directly contact atleast one of the pad electrode and the bump electrode.

The conductive film member may further include a film layer partiallycovering the conductive balls.

A thickness of the film layer disposed in the first area may bedifferent from a thickness of the film layer disposed in the secondarea.

The film layer disposed in the first area may have a first thickness andexpose at least a portion of each of the conductive balls disposed inthe first area, and the film layer disposed in the second area may havea second thickness greater than the first thickness and cover theconductive balls disposed in the second area.

The film package may further include a base substrate disposed on thebump electrodes.

The conductive film member may electrically connect the film package andthe pad electrodes disposed in the first area, and a top surface of theconductive film member disposed in the second area may be spaced apartfrom a bottom surface of the base substrate.

The display device may further include an adhesive member disposedbetween the conductive film member and the film package disposed in thesecond area.

A method of manufacturing a display device according to anotherexemplary embodiment includes providing a lower substrate having adisplay area and a pad area, forming a display structure in the displayarea of the lower substrate, forming pad electrodes in the pad area ofthe lower substrate to be spaced apart from each other in a firstdirection parallel to a top surface of the lower substrate, forming anupper substrate on the display structure to face the lower substrate inthe display area, forming a conductive film member including a non-curedresin layer and conductive balls arranged in a lattice shape on the padelectrodes, the non-cured resin layer overlapping the pad electrodes,and forming a film package on the non-cured resin layer, the filmpackage including bump electrodes overlapping the pad electrodes.

The conductive balls may be arranged in the first direction and a seconddirection orthogonal to the first direction, and be spaced apart fromeach other at equidistant intervals.

The method may further include placing a heating member to contact a topsurface of the film package, applying heat and a pressure to the topsurface of the film package, and curing the non-cured resin layer toform a cured-resin layer.

The pressure applied to the top surface of the film package may reduceintervals between the pad electrodes and the bump electrodes, such thata shape of each of the conductive balls disposed between the padelectrodes and the bump electrodes is deformed.

The cured-resin layer may at least partially cover the conductive balls,the cured-resin layer may have a first area where the pad electrodesoverlap the bump electrodes, and a second area where the pad electrodesdo not overlap the bump electrodes, the cured-resin layer disposed inthe first area may have a first thickness and exposes at least a portionof each of the conductive balls disposed in the first area, and thecured-resin layer disposed in the second area may have a secondthickness greater than the first thickness and covers the conductiveballs disposed in the second area.

The conductive balls may include first conductive balls disposed in thefirst area, and second conductive balls disposed in the second area, anda diameter of each of the first conductive balls in a first directionfrom the film package to the pad electrode may be less than a diameterof each of the second conductive balls in the first direction.

The conductive balls may not overlap each other in a first directionfrom the film package to the pad electrode in each of the first andsecond areas.

The method may further include placing a resin on one side of the padelectrodes, forming the resin in the second area, and curing the resin.

The resin disposed on the one side of the pad electrodes may penetrateinto the second area through a capillary phenomenon, and the resinincludes a photo-curable resin.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of theinvention, and together with the description serve to explain theinventive concepts.

FIG. 1 is a plan view of a display device according to an exemplaryembodiment.

FIG. 2 is a cross-sectional view taken along line I-I′ of FIG. 1.

FIG. 3 is a cross-sectional view taken along line II-II′ of FIG. 1.

FIG. 4 is a block diagram of an external device electrically connectedto the display device of FIG. 1.

FIG. 5 is a partially enlarged view of area ‘A’ of FIG. 2.

FIGS. 6 and 7 are cross-sectional views of the display device accordingto exemplary embodiments.

FIG. 8 is a cross-sectional view of an adhesive member shown in FIG. 6according to an exemplary embodiment.

FIGS. 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, and 21 are viewsillustrating a method of manufacturing a display device according to anexemplary embodiment.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments or implementations of theinvention. As used herein “embodiments” and “implementations” areinterchangeable words that are non-limiting examples of devices ormethods employing one or more of the inventive concepts disclosedherein. It is apparent, however, that various exemplary embodiments maybe practiced without these specific details or with one or moreequivalent arrangements. In other instances, well-known structures anddevices are shown in block diagram form in order to avoid unnecessarilyobscuring various exemplary embodiments. Further, various exemplaryembodiments may be different, but do not have to be exclusive. Forexample, specific shapes, configurations, and characteristics of anexemplary embodiment may be used or implemented in another exemplaryembodiment without departing from the inventive concepts.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail of someways in which the inventive concepts may be implemented in practice.Therefore, unless otherwise specified, the features, components,modules, layers, films, panels, regions, and/or aspects, etc.(hereinafter individually or collectively referred to as “elements”), ofthe various embodiments may be otherwise combined, separated,interchanged, and/or rearranged without departing from the inventiveconcepts.

The use of cross-hatching and/or shading in the accompanying drawings isgenerally provided to clarify boundaries between adjacent elements. Assuch, neither the presence nor the absence of cross-hatching or shadingconveys or indicates any preference or requirement for particularmaterials, material properties, dimensions, proportions, commonalitiesbetween illustrated elements, and/or any other characteristic,attribute, property, etc., of the elements, unless specified. Further,in the accompanying drawings, the size and relative sizes of elementsmay be exaggerated for clarity and/or descriptive purposes. When anexemplary embodiment may be implemented differently, a specific processorder may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order. Also, like reference numerals denote like elements.

When an element, such as a layer, is referred to as being “on,”“connected to,” or “coupled to” another element or layer, it may bedirectly on, connected to, or coupled to the other element or layer orintervening elements or layers may be present. When, however, an elementor layer is referred to as being “directly on,” “directly connected to,”or “directly coupled to” another element or layer, there are nointervening elements or layers present. To this end, the term“connected” may refer to physical, electrical, and/or fluid connection,with or without intervening elements. Further, the D1-axis, the D2-axis,and the D3-axis are not limited to three axes of a rectangularcoordinate system, such as the x, y, and z-axes, and may be interpretedin a broader sense. For example, the D1-axis, the D2-axis, and theD3-axis may be perpendicular to one another, or may represent differentdirections that are not perpendicular to one another. For the purposesof this disclosure, “at least one of X, Y, and Z” and “at least oneselected from the group consisting of X, Y, and Z” may be construed as Xonly, Y only, Z only, or any combination of two or more of X, Y, and Z,such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Although the terms “first,” “second,” etc. may be used herein todescribe various types of elements, these elements should not be limitedby these terms. These terms are used to distinguish one element fromanother element. Thus, a first element discussed below could be termed asecond element without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,”“above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), andthe like, may be used herein for descriptive purposes, and, thereby, todescribe one elements relationship to another element(s) as illustratedin the drawings. Spatially relative terms are intended to encompassdifferent orientations of an apparatus in use, operation, and/ormanufacture in addition to the orientation depicted in the drawings. Forexample, if the apparatus in the drawings is turned over, elementsdescribed as “below” or “beneath” other elements or features would thenbe oriented “above” the other elements or features. Thus, the exemplaryterm “below” can encompass both an orientation of above and below.Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90degrees or at other orientations), and, as such, the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof. It is also noted that, as used herein, the terms“substantially,” “about,” and other similar terms, are used as terms ofapproximation and not as terms of degree, and, as such, are utilized toaccount for inherent deviations in measured, calculated, and/or providedvalues that would be recognized by one of ordinary skill in the art.

Various exemplary embodiments are described herein with reference tosectional and/or exploded illustrations that are schematic illustrationsof idealized exemplary embodiments and/or intermediate structures. Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should notnecessarily be construed as limited to the particular illustrated shapesof regions, but are to include deviations in shapes that result from,for instance, manufacturing. In this manner, regions illustrated in thedrawings may be schematic in nature and the shapes of these regions maynot reflect actual shapes of regions of a device and, as such, are notnecessarily intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and should not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1 is a plan view of a display device according to an exemplaryembodiment, FIG. 2 is a cross-sectional view taken along line I-I′ ofFIG. 1, FIG. 3 is a cross-sectional view taken along line II-II′ of FIG.1, and FIG. 4 is a block diagram of an external device electricallyconnected to the display device of FIG. 1.

Referring to FIGS. 1, 2, 3, and 4, a display device 100 may include alower substrate 110, a display structure 200, an upper substrate 410, asealing member 450, an insulating layer 460, pad electrodes 470, aconductive film member 600, a film package 500, and the like. The lowersubstrate 110 may include a display area 10 and a pad area 60 located atone side of the display area 10. The conductive film member 600 mayinclude conductive balls and a film layer 630, and the conductive ballsmay include first conductive balls 610 and second conductive balls 620.In addition, the film package 500 may include a base substrate 510 andbump electrodes 520.

The lower substrate 110 may include a transparent or opaque material.For example, the lower substrate 110 may include a quartz substrate, asynthetic quartz substrate, a calcium fluoride substrate, afluorine-doped quartz substrate (F-doped quartz substrate), a soda limeglass substrate, a non-alkali glass substrate, etc. In other exemplaryembodiments, the lower substrate 110 may include a transparent resinsubstrate having flexibility, such as a polyimide substrate. In thiscase, the polyimide substrate may include a first polyimide layer, abarrier film layer, a second polyimide layer, and the like.

The display structure 200 (e.g., display structure 200 of FIG. 5) may bedisposed in the display area 10 of the lower substrate 110. An image(e.g., video image) may be displayed in the display area 10 through thedisplay structure 200.

The upper substrate 410 may be disposed in the display area 10 of thedisplay structure 200. The upper substrate 410 may face the lowersubstrate 110, and may not be disposed in the pad area 60. The uppersubstrate 410 may include substantially the same material as the lowersubstrate 110. For example, the upper substrate 410 may include a quartzsubstrate, a synthetic quartz substrate, a calcium fluoride substrate,an F-doped quartz substrate, a soda lime glass substrate, a non-alkaliglass substrate, etc. In other exemplary embodiments, the uppersubstrate 410 may include a transparent inorganic material or flexibleplastic. For example, the upper substrate 410 may include a transparentresin substrate having flexibility. In this case, in order to improveflexibility of an organic light emitting diode display device 100, theupper substrate 410 may have a structure, in which at least oneinorganic layer and at least one organic layer are alternately stacked.More particularly, the stacked structure may include a first inorganiclayer, an organic layer, and a second inorganic layer.

An outermost portion of the display area 10 may be defined as aperipheral area. The sealing member 450 may be disposed in theperipheral area between the lower substrate 110 and the upper substrate410. In particular, the sealing member 450 may be disposed along theperipheral area, and may surround the display structure 200. The sealingmember 450 may include a frit and the like. In addition, the sealingmember 450 may further include a photocurable material. For example, thesealing member 450 may include a mixture of an organic material and aphotocurable material, and the sealing member 450 may be obtained byirradiating the mixture with ultraviolet (UV) light, laser light,visible light, or the like to cure the mixture. The photocurablematerial included in the sealing member 450 may include an acryl resin,an epoxy resin, an epoxy acrylate resin, a polyester acrylate resin, apolyester urethane acrylate oligomer resin, a urethane acrylate resin, aurethane acrylate oligomer resin, a polybutadiene acrylate resin, asilicon acrylate resin, an alkyl acrylate resin, a vinyl phenol resin, abismaleimide resin, a diallyl phthalate resin, etc. For example, thelaser light may be irradiated to the mixture, which may change themixture from a solid state to a liquid state, and the mixture in theliquid state may be cured back to the solid state after a predeterminedtime. As the state of the mixture changes, the upper substrate 410 maybe coupled to the lower substrate 110 while being sealed with respect tothe lower substrate 110.

Wires (e.g., gate signal wires, data signal wires, gate initializationsignal wires, initialization voltage wires, light emission controlsignal wires, power supply voltage wires, etc.) may be disposed in theperipheral area on the lower substrate 110. In this case, first portionsof the wires may be electrically connected to the display structure 200,and second portions of the wires may be electrically connected to thepad electrodes 470. In some exemplary embodiments, a gate driver and adata driver may be disposed in the peripheral area.

The pad electrodes 470 may be disposed in the pad area 60 on the lowersubstrate 110. The pad electrodes 470 may be spaced apart from eachother in a first direction D1 parallel to a top surface of the lowersubstrate 110 (see FIG. 21). As shown in FIG. 3, a portion where the padelectrodes 470 are disposed may be defined as a first area 61, and aportion where the pad electrodes 470 are not disposed (e.g., a spacebetween two adjacent pad electrodes 470 among the pad electrodes 470)may be defined as a second area 62. A width of each of the padelectrodes 470 in the first direction D1 (e.g., a width of the firstarea 61 in the first direction D1) may be about 14 micrometers, and awidth of a space between two adjacent pad electrodes 470 in the firstdirection D1 (e.g., a width of the second area 62 in the first directionD1) may be about 16 micrometers.

For example, the pad electrodes 470 may include first to n^(th) padelectrodes (where n is an integer of 1 or more), and the first to n^(th)pad electrodes may be arranged in the first direction D1 in the pad area60 while being spaced apart from each other at a predetermined interval.A portion where the first to n^(th) pad electrodes are disposed maycorrespond to the first area 61, and a space between k^(th) and(k+1)^(th) pad electrodes among the first to n^(th) pad electrodes maycorrespond to the second area 62 (where k is an integer between 1 andn).

In addition, the pad electrodes 470 may be electrically connected to agate signal wire, a data signal wire, a gate initialization signal wire,an initialization voltage wire, a light emission control signal wire, apower supply voltage wire, and the like, which are disposed in theperipheral area. As shown in FIG. 4, the pad electrodes 470 may beelectrically connected to the display device 100 and an external device101. For example, the external device 101 may generate a gate signal, adata signal, a gate initialization signal, an initialization voltage, alight emission control signal, a power supply voltage, and the like. Theexternal device 101 may be electrically connected to the display device100 through the film package 500, the conductive film member 600, andthe pad electrodes 470, and may provide the gate signal, the datasignal, the gate initialization signal, the initialization voltage, thelight emission control signal, the power supply voltage, and the like tothe display structure 200.

Furthermore, the pad electrodes 470 may include metal, an alloy, metalnitride, conductive metal oxide, a transparent conductive material, etc.For example, pad electrodes 470 may include gold (Au), silver (Ag),aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), palladium(Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr),tantalum (Ta), tungsten (W), copper (Cu), molybdenum (Mo), scandium(Sc), neodymium (Nd), iridium (Ir), an aluminum-containing alloy,aluminum nitride (AlN_(x)), a silver-containing alloy, tungsten nitride(WN_(x)), a copper-containing alloy, a molybdenum-containing alloy,titanium nitride (TiN_(x)), chromium nitride (CrN_(x)), tantalum nitride(TaN_(x)), strontium ruthenium oxide (SrRu_(x)O_(y)), zinc oxide(ZnO_(x)), indium tin oxide (ITO), tin oxide (SnO_(x)), indium oxide(InO_(x)), gallium oxide (GaO_(x)), indium zinc oxide (IZO), etc. Thesemay be used alone or in combination with each other. In other exemplaryembodiments, each of the pad electrodes 470 may have a multilayerstructure including a plurality of metal layers.

Referring again to FIGS. 1, 2, and 3, the insulating layer 460 may bedisposed in a portion of the pad area 60 on the lower substrate 110. Inparticular, the insulating layer 460 may surround each of the padelectrodes 470 in the pad area 60. For example, the insulating layer 460may be disposed in the second area 62 on the lower substrate 110, andmay not be disposed in the first area 61. In exemplary embodiments, atop surface of the insulating layer 460 and a top surface of each of thepad electrodes 470 may be located at the same level. In other exemplaryembodiments, the insulating layer 460 may cover both sides of each ofthe pad electrodes 470, and the top surface of the insulating layer 460may be located lower or higher than the top surface of each of the padelectrodes 470. The insulating layer 460 may include an organic materialor an inorganic material. In exemplary embodiments, the insulating layer460 may include an organic material, such as a photoresist, apolyacryl-based resin, a polyimide-based resin, a polyamide-based resin,a siloxane-based resin, an acryl-based resin, and an epoxy-based resin.

The conductive film member 600 may overlap the pad electrodes 470 andthe insulating layer 460. The conductive film member 600 may include ananisotropic conducting film (ACF). The conductive film member 600 mayelectrically connect the film package 500 to the pad electrodes 470 inthe first area 61, and a top surface of the conductive film member 600may be spaced apart from a bottom surface of the base substrate 510.

In the illustrated exemplary embodiment, the conductive film member 600may include the conductive balls and the film layer 630. The shapes ofthe conductive balls in the first area 61 may be different from theshapes of the conductive balls in the second area 62. For example, eachof the conductive balls located in the first area 61 may havesubstantially an elliptical shape when viewed in a plan view, and eachof the conductive balls located in the second area 62 may havesubstantially a circular shape when viewed in a plan view. In addition,the conductive balls may be arranged in the first direction D1 and asecond direction D2 on the pad electrodes 470 and the insulating layer460, and may be spaced apart from each other at equidistant intervals(see FIG. 13). In particular, the conductive balls may be arranged inonly one layer, and may not overlap each other in a third direction D3perpendicular to the first direction D1 and the second direction D2.

As shown in FIG. 3, the first conductive balls 610 may be disposed inthe first area 61 between the pad electrodes 470 and the bump electrodes520, and the second conductive balls 620 may be disposed in the secondarea 62. A diameter of each of the first conductive balls 610 in thethird direction D3 may be less than a diameter of each of the secondconductive balls 620 in the third direction D3. For example, thediameter of each of the second conductive balls 620 may be about 3.2micrometers, and the diameter of each of the first conductive balls 610may be about 2.8 micrometers. In the illustrated exemplary embodiment,at least a portion of each of the first conductive balls 610 maydirectly contact the pad electrodes 470 and the bump electrodes 520.Each of the conductive balls may have a structure, in which a sphericalpolymer is coated with a metal layer, such as nickel, cobalt, gold,silver, and copper.

The film layer 630 may partially cover the conductive balls. In theillustrated exemplary embodiment, a thickness of the film layer 630 inthe first area 61 may be different from a thickness of the film layer630 in the second area 62. For example, the film layer 630 may have afirst thickness in the first area 61, and may expose at least a portionof each of the first conductive balls 610. In addition, the film layer630 may have a second thickness greater than the first thickness in thesecond area 62, and may cover the second conductive balls 620 in thesecond area 62. Furthermore, in the second area 62, a top surface of thefilm layer 630 may be spaced apart from the bottom surface of the basesubstrate 510. In particular, an empty space defined by the top surfaceof the film layer 630, both side surfaces of each of the bump electrodes520, and the bottom surface of the base substrate 510 may be formed inthe second area 62. The film layer 630 may include a thermosetting resinor a photocurable resin. In the illustrated exemplary embodiment, thefilm layer 630 may include a thermosetting resin. For example, the filmlayer 630 may include an epoxy resin, an amino resin, a phenol resin, aurea resin, a melamine resin, an unsaturated polyester resin, apolyurethane resin, a polyimide resin, etc.

In the illustrated exemplary embodiment, although a length of theconductive film member 600 in the second direction D2 orthogonal to thefirst direction D1 has been described as being equal to a length of eachof the pad electrodes 470 in the second direction D2, the inventiveconcepts are not limited thereto. For example, in other exemplaryembodiments, the conductive film member 600 may extend in the seconddirection D2 and a direction opposite to the second direction D2, andthe length of the conductive film member 600 in the second direction D2may be greater than the length of each of the pad electrodes 470 in thesecond direction D2. In particular, the conductive film member 600 shownin FIG. 2 may extend so as to be disposed on the insulating layer 460.

In addition, in the illustrated exemplary embodiment, although theconductive balls have been described as being arranged in substantiallya lattice shape, the inventive concepts are not limited thereto. Forexample, in other exemplary embodiments, the conductive balls may bearranged in substantially a rectangular or rhombus shape when viewed ina plan view.

Furthermore, in the illustrated exemplary embodiment, although theconductive balls have been described as having a circular shape or anelliptical shape when viewed in a plan view, the inventive concepts arenot limited thereto. For example, in other exemplary embodiments, theconductive balls may have substantially a triangular shape, arectangular shape, a rhombic shape, a polygonal shape, or a track shape,when viewed from a plan view.

For example, as the size of a conventional display device increases, anda resolution of the conventional display device increases, the number ofsignals input to the display device may be increased. As such, thedisplay device may include a relatively large number of pad electrodesto receive the signals from the external device 101. In order to arrangethe relatively large number of pad electrodes in a limited space, aninterval between the pad electrodes may become relatively narrow. Ananisotropic conductive film having a relatively thick thickness isgenerally included in the conventional display device. However, theconventional anisotropic conductive film may have a configuration, inwhich the conductive balls are irregularly arranged in one layer, or theconductive balls overlap each other in a plurality of layers in thethird direction (e.g., a depth direction). In addition, in a process ofcuring the anisotropic film, when the film package 500 applies apressure to the anisotropic conductive film in a direction opposite tothe third direction D3, a relatively large amount of reflow may occurfrom the first area 61 to the second area 62, due to the thickness offilm layer that is relatively thick. In this case, a density of theconductive balls may be relatively low in the first area 61, and thedensity of the conductive balls may be relatively high in the secondarea 62. Accordingly, adjacent pad electrodes 470 or adjacent bumpelectrodes 520 may be short-circuited by the conductive balls, and thepad electrode 470 and the bump electrode 520, which overlap each other,may not be electrically connected to each other.

The conductive film member 600 according to an exemplary embodiment mayhave a relatively thin thickness. For example, the conductive ballsincluded in the conductive film member 600 may be regularly arrangedwhile being spaced apart from each other at equidistant intervals. Inaddition, the conductive balls may be arranged in only one layer, andmay not overlap each other in the third direction D3. In addition, inthe process of curing the conductive film member 600, since the filmlayer 630 covering the conductive balls is formed of a non-cured resinlayer, when the film package 500 applies the pressure to the conductivefilm member 600 in the direction opposite to the third direction D3, thenon-cured resin layer located in the first area 61 may be reflowed intothe second area 62, such that the non-cured resin layer may expose atleast a portion of each of the first conductive balls 610 located in thefirst area 61, and the bump electrodes 520 and the pad electrodes 470may easily make direct contact with the first conductive balls 610. Inthis case, since a relatively small amount of the non-cured resin layeris reflowed in the first area 61, the first conductive balls 610 may notbe moved. In this manner, a density of the first conductive balls 610may be relatively uniform in the first area 61. In addition, since arelatively small amount of the non-cured resin layer is reflowed fromthe first area 61 to the second area 62, the second conductive balls 620may not be moved, such that a density of the second conductive balls 620may also be uniform in the second area 62. Accordingly, the adjacent padelectrodes 470 or the adjacent bump electrodes 520 may not beshort-circuited by the conductive balls, and the pad electrode 470 andthe bump electrode 520, which overlap each other, may be easily andelectrically connected to each other.

The film package 500 may be disposed on the conductive film member 600.The film package 500 may include a printed circuit board (PCB), aflexible printed circuit board (FPCB), or a flexible flat cable (FFC).As described above, the conductive film member 600 may electricallyconnect the external device 101 to the display device 100. For example,a first portion of the film package 500 may make direct contact with theconductive film member 600, and a second portion opposing the firstportion of the film package 500 may make direct contact with theexternal device 101. In some exemplary embodiments, a driver integratedcircuit may be mounted on the film package 500.

In the illustrated exemplary embodiment, the film package 500 mayinclude the base substrate 510 and the bump electrodes 520. The bumpelectrodes 520 may be disposed on the bottom surface of the basesubstrate 510 while being spaced apart from each other. For example, thebump electrodes 520 may overlap the first area 61 on the conductive filmmember 600, and the base substrate 510 may be located in the first area61 and the second area 62 on the bump electrodes 520. The base substrate510 may include a flexible film including a material having flexibility.For example, the base substrate 510 may include a polyimide resin, apolyester resin, etc. The bump electrodes 520 may include metal, analloy, metal nitride, conductive metal oxide, a transparent conductivematerial, etc. These may be used alone or in combination with eachother. In other exemplary embodiments, the bump electrodes 520 may havea multilayer structure including a plurality of metal layers.

For example, the bump electrodes 520 may include first to m^(th) bumpelectrodes (where m is an integer of 1 or more), and the first to m^(th)bump electrodes may be disposed on the first to n^(th) pad electrodes tooverlap the first to n^(th) pad electrodes, respectively.

The display device 100 according to the exemplary embodiments includesthe film package 500 having a relatively thin thickness to prevent theadjacent pad electrodes 470 or the adjacent bump electrodes 520 frombeing short-circuited by the conductive balls, such that the padelectrode 470 and the bump electrode 520, which overlap each other, maybe easily and electrically connected to each other.

FIG. 5 is a partially enlarged view of area ‘A’ of FIG. 2.

Referring to FIG. 5, the display structure 200 may include asemiconductor element 250, a planarization layer 270, a pixel defininglayer 310, a lower electrode 290, a light emitting layer 330, and anupper electrode 340. The semiconductor element 250 may include an activelayer 130, a gate insulating layer 150, a gate electrode 170, aninterlayer insulating layer 190, a source electrode 210, and a drainelectrode 230.

In some exemplary embodiments, a buffer layer may be disposed on thelower substrate 110. The buffer layer may prevent metal atoms orimpurities from diffusing from the lower substrate 110, and may controla heat transfer rate during a crystallization process for forming theactive layer 130 to obtain a substantially uniform active layer 130. Inaddition, when a surface of the lower substrate 110 is not uniform, thebuffer layer may improve the flatness of the surface of the lowersubstrate 110. Depending on a type of the lower substrate 110, in someexemplary embodiments, at least two buffer layers may be provided on thelower substrate 110, or the buffer layer may be omitted. The bufferlayer may include a silicon compound, metal oxide, etc.

The active layer 130 may be disposed on the lower substrate 110. Theactive layer 130 may include a metal oxide semiconductor, an inorganicsemiconductor (e.g., amorphous silicon or poly silicon semiconductor),an organic semiconductor, etc. The active layer 130 may have a sourceregion and a drain region.

The gate insulating layer 150 may be disposed on the active layer 130.The gate insulating layer 150 may be disposed on the lower substrate 110to cover the active layer 130. For example, the gate insulating layer150 may sufficiently cover the active layer 130, and may have asubstantially flat top surface without creating a step around the activelayer 130. In some exemplary embodiments, the gate insulating layer 150may be disposed along a profile of the active layer 130 with a uniformthickness to cover the active layer 130 on the lower substrate 110. Thegate insulating layer 150 may include a silicon compound, metal oxide,etc. For example, the gate insulating layer 150 may include siliconoxide (SiO_(x)), silicon nitride (SiN_(x)), silicon oxynitride(SiO_(x)N_(y)), silicon oxycarbide (SiO_(x)C_(y)), silicon carbonitride(SiC_(x)N_(y)), aluminum oxide (AlO_(x)), aluminum nitride (AlN_(x)),tantalum oxide (TaO_(x)), hafnium oxide (HfO_(x)), zirconium oxide(ZrO_(x)), titanium oxide (TiO_(x)), etc. In other exemplaryembodiments, the gate insulating layer 150 may have a multilayerstructure including a plurality of insulating layers. For example, theinsulating layers may have different thicknesses and/or includedifferent materials.

The gate electrode 170 may be disposed on a portion of the gateinsulating layer 150 under which the active layer 130 is located. Thegate electrode 170 may include metal, an alloy, metal nitride,conductive metal oxide, a transparent conductive material, etc. Thesemay be used alone or in combination with each other. In other exemplaryembodiments, the gate electrode 170 may have a multilayer structureincluding a plurality of metal layers. For example, the metal layers mayhave different thicknesses and/or include different materials.

The interlayer insulating layer 190 may be disposed on the gateelectrode 170. The interlayer insulating layer 190 may be disposed onthe gate insulating layer 150 to cover the gate electrode 170. Forexample, the interlayer insulating layer 190 may sufficiently cover thegate electrode 170 on the gate insulating layer 150, and may have asubstantially flat top surface without creating a step around the gateelectrode 170. In some exemplary embodiments, the interlayer insulatinglayer 190 may be disposed along a profile of the gate electrode 170 witha uniform thickness to cover the gate electrode 170 on the gateinsulating layer 150. The interlayer insulating layer 190 may include asilicon compound, metal oxide, etc. In other exemplary embodiments, theinterlayer insulating layer 190 may have a multilayer structureincluding a plurality of insulating layers. For example, the insulatinglayers may have different thicknesses and/or include differentmaterials.

The source electrode 210 and the drain electrode 230 may be disposed onthe interlayer insulating layer 190. The source electrode 210 and thedrain electrode 230 may be respectively connected to the source regionand the drain region of the active layer 130 through contact holesformed by removing portions of the gate insulating layer 150 and theinterlayer insulating layer 190. Each of the source electrode 210 andthe drain electrode 230 may include metal, an alloy, metal nitride,conductive metal oxide, a transparent conductive material, etc. Thesemay be used alone or in combination with each other. In other exemplaryembodiments, the source electrode 210 and the drain electrode 230 mayhave a multilayer structure including a plurality of metal layers.

Accordingly, the semiconductor element 250 including the active layer130, the gate insulating layer 150, the gate electrode 170, theinterlayer insulating layer 190, the source electrode 210, and the drainelectrode 230 may be provided.

Although the semiconductor element 250 has been described as having atop gate structure, the inventive concepts are not limited thereto. Forexample, in some exemplary embodiments, the semiconductor element 250may have a bottom gate structure or a double gate structure.

The planarization layer 270 may be disposed on the source electrode 210and the drain electrode 230. The planarization layer 270 may cover thesource electrode 210 and the drain electrode 230. In particular, theplanarization layer 270 may be disposed over the interlayer insulatinglayer 190. In the exemplary embodiments, the planarization layer 270 mayhave a relatively thick thickness to sufficiently cover the sourceelectrode 210 and the drain electrode 230. In this case, theplanarization layer 270 may have a substantially flat top surface. Inorder to form the planarization layer 270 having a substantially flattop surface, a planarization process may be additionally performed onthe planarization layer 270. In some exemplary embodiments, theplanarization layer 270 may be disposed along a profile of the sourceelectrode 210 and the drain electrode 230 with a uniform thickness tocover the source electrode 210 and the drain electrode 230. Theplanarization layer 270 may be formed of an organic material or aninorganic material. In the illustrated exemplary embodiment, theplanarization layer 270 may include an organic material.

The lower electrode 290 may be disposed on the planarization layer 270.The lower electrode 290 may be connected to the drain electrode 230through a contact hole formed by removing a portion of the planarizationlayer 270. In addition, the lower electrode 290 may be electricallyconnected to the semiconductor element 250. The lower electrode 290 mayinclude metal, an alloy, metal nitride, conductive metal oxide, atransparent conductive material, etc. These may be used alone or incombination with each other. In other exemplary embodiments, the lowerelectrode 290 may have a multilayer structure including a plurality ofmetal layers.

The pixel defining layer 310 may be disposed on the planarization layer270 and may expose a portion of a top surface of the lower electrode290. The pixel defining layer 310 may be formed of an organic materialor an inorganic material. In the illustrated exemplary embodiment, thepixel defining layer 310 may include an organic material.

The light emitting layer 330 may be disposed on the lower electrode 290,which is at least partially exposed. The light emitting layer 330 may beformed by using at least one of light emitting materials for emittingdifferent color lights (e.g., red light, green light, blue light, etc.)according to sub-pixels. Alternatively, the light emitting layer 330 maybe formed by laminating a plurality of light emitting materials foremitting different color lights, such as red light, green light, andblue light, to emit white light as a whole. In this case, a color filtermay be disposed on the light emitting layer 330. The color filter mayinclude at least one of a red color filter, a green color filter, and ablue color filter. In some exemplary embodiments, the color filter mayinclude a yellow color filter, a cyan color filter, and a magenta colorfilter, for example. The color filter may include a photosensitive resinor a color photoresist.

The upper electrode 340 may be disposed on the pixel defining layer 310and the light emitting layer 330. The upper electrode 340 may includemetal, an alloy, metal nitride, conductive metal oxide, a transparentconductive material, etc. In other exemplary embodiments, the upperelectrode 340 may have a multilayer structure including a plurality ofmetal layers.

Although the display device 100 has been described as an organic lightemitting diode display device, the inventive concepts are not limitedthereto. In other exemplary embodiments, the display device 100 mayinclude a liquid crystal display device (LCD), a field emission displaydevice (FED), a plasma display device (PDP), or an electrophoretic imagedisplay device (EPD).

FIGS. 6 and 7 are cross-sectional views of a display device according toanother exemplary embodiment, and FIG. 8 is a cross-sectional view of anadhesive member shown in FIG. 6 according to another exemplaryembodiment. The display device 700 illustrated in FIGS. 6 and 7 may havea configuration substantially identical or similar to that of thedisplay device 100 described with reference to FIGS. 1 to 5, except foran adhesive member 710. As such, repeated descriptions of thesubstantially the same components described above with reference toFIGS. 1 to 5 will be omitted to avoid redundancy.

Referring to FIGS. 1, 6, and 7, the display device 700 may include alower substrate 110, a display structure 200, an upper substrate 410, asealing member 450, an insulating layer 460, pad electrodes 470, aconductive film member 600, a film package 500, an adhesive member 710,and the like. The lower substrate 110 may include a display area 10 anda pad area 60 located at one side of the display area 10. The conductivefilm member 600 may include conductive balls and a film layer 630, andthe conductive balls may include first conductive balls 610 and secondconductive balls 620. In addition, the film package 500 may include abase substrate 510 and bump electrodes 520. Furthermore, a portion wherethe pad electrodes 470 are disposed may be defined as a first area 61, aportion where the pad electrodes 470 are not disposed may be defined asa second area 62, and an empty space defined by a top surface of thefilm layer 630, both side surfaces of each of the bump electrodes 520,and a bottom surface of the base substrate 510 may be formed in thesecond area 62.

The adhesive member 710 may be disposed in a portion of the pad area 60and the second area 62 on the insulating layer 460. In particular, theadhesive member 710 may be disposed on a first side of the conductivefilm member 600 adjacent to the sealing member 450, a first side of thefilm package 500, a portion of a side surface of the base substrate 510,the empty space, and the like (see also FIGS. 20 and 21). For example,the adhesive member 710 may make direct contact with the top surface ofthe film layer 630, the both side surfaces of each of the bumpelectrodes 520, and the bottom surface of the base substrate 510. Sincethe adhesive member 710 is disposed in the empty space, the film package500 and the conductive film member 600 may be firmly adhered to eachother. The adhesive member 710 may include a thermosetting resin or aphotocurable resin. In the illustrated exemplary embodiment, theadhesive member 710 may include a photocurable resin. For example, theadhesive member 710 may include an acryl resin, an epoxy resin, an epoxyacrylate resin, a polyester acrylate resin, a polyester urethaneacrylate oligomer resin, a urethane acrylate resin, a urethane acrylateoligomer resin, a polybutadiene acrylate resin, a silicon acrylateresin, an alkyl acrylate resin, a vinyl phenol resin, a bismaleimideresin, a diallyl phthalate resin, etc.

Since the display device 700 according to the illustrated exemplaryembodiment includes the adhesive member 710, an adhesive strengthbetween the film package 500 and the conductive film member 600 may beincreased.

Referring FIG. 8, the display device 700 according to another exemplaryembodiment may further include a sub-adhesive member 720. Thesub-adhesive member 720 may be disposed on a second side opposing thefirst side of the conductive film member 600, a second side opposing thefirst side of the film package 500, a portion of the bottom surface ofthe base substrate 510, and the like. The sub-adhesive member 720 maymake contact with an end of the adhesive member 710 disposed in thesecond area 62. Since the display device 700 further includes thesub-adhesive member 720, the adhesive strength between the film package500 and the conductive film member 600 may be further increased.

FIGS. 9 to 21 are views illustrating a method of manufacturing a displaydevice according to an exemplary embodiment. For example, FIGS. 9, 10,11, 12, 14, 15, 16, 17, 18, and 19 correspond to cross-sectional viewsof the display device, and FIGS, 13, 20, and 21 correspond to plan viewsof the display device. In FIG. 20, the film package 500 is not shown inFIG. 21 for convenience of explanation.

Referring to FIGS. 9, 10, and 11, the lower substrate 110 including atransparent or opaque material may be provided. The lower substrate 110may be formed by using a quartz substrate, a synthetic quartz substrate,a calcium fluoride substrate, a fluorine-doped quartz substrate (F-dopedquartz substrate), a soda lime glass substrate, a non-alkali glasssubstrate, etc.

The active layer 130 may be formed in the display area 10 on the lowersubstrate 110, and the active layer 130 may be formed by using a metaloxide semiconductor, an inorganic semiconductor, or an organicsemiconductor. The active layer 130 may have a source region and a drainregion.

The gate insulating layer 150 may be formed on the active layer 130. Thegate insulating layer 150 may be formed on the lower substrate 110 tocover the active layer 130. For example, the gate insulating layer 150may sufficiently cover the active layer 130, and may have asubstantially flat top surface without creating a step around the activelayer 130. In some exemplary embodiments, the gate insulating layer 150may be formed along a profile of the active layer 130 with a uniformthickness to cover the active layer 130 on the lower substrate 110. Thegate insulating layer 150 may include a silicon compound, metal oxide,etc. For example, the gate insulating layer 150 may be formed by usingsilicon oxide (SiO_(x)), silicon nitride (SiN_(x)), silicon oxynitride(SiO_(x)N_(y)), silicon oxycarbide (SiO_(x)C_(y)), silicon carbonitride(SiC_(x)N_(y)), aluminum oxide (AlO_(x)), aluminum nitride (AlN_(x)),tantalum oxide (TaO_(x)), hafnium oxide (HfO_(x)), zirconium oxide(ZrO_(x)), titanium oxide (TiO_(x)), etc. In other exemplaryembodiments, the gate insulating layer 150 may have a multilayerstructure including a plurality of insulating layers. For example, theinsulating layers may have different thicknesses and/or includedifferent materials.

The gate electrode 170 may be formed on a portion of the gate insulatinglayer 150 under which the active layer 130 is located. The gateelectrode 170 may be formed by using metal, an alloy, metal nitride,conductive metal oxide, a transparent conductive material, etc. Thesemay be used alone or in combination with each other. In other exemplaryembodiments, the gate electrode 170 may have a multilayer structureincluding a plurality of metal layers. For example, the metal layers mayhave different thicknesses and/or mutually different materials.

The interlayer insulating layer 190 may be formed on the gate electrode170. The interlayer insulating layer 190 may be formed on the gateinsulating layer 150 to cover the gate electrode 170. For example, theinterlayer insulating layer 190 may sufficiently cover the gateelectrode 170 on the gate insulating layer 150, and may have asubstantially flat top surface without creating a step around the gateelectrode 170. In some exemplary embodiments, the interlayer insulatinglayer 190 may be formed along a profile of the gate electrode 170 with auniform thickness to cover the gate electrode 170 on the gate insulatinglayer 150. The interlayer insulating layer 190 may include a siliconcompound, metal oxide, etc. In other exemplary embodiments, theinterlayer insulating layer 190 may have a multilayer structureincluding a plurality of insulating layers. For example, the insulatinglayers may have different thicknesses and/or include differentmaterials.

The source electrode 210 and the drain electrode 230 may be formed onthe interlayer insulating layer 190. The source electrode 210 and thedrain electrode 230 may be respectively connected to the source regionand the drain region of the active layer 130 through contact holesformed by removing portions of the gate insulating layer 150 and theinterlayer insulating layer 190. Each of the source electrode 210 andthe drain electrode 230 may be formed by using metal, an alloy, metalnitride, conductive metal oxide, a transparent conductive material, etc.These may be used alone or in combination with each other. In otherexemplary embodiments, the source electrode 210 and the drain electrode230 may have a multilayer structure including a plurality of metallayers. For example, the metal layers may have different thicknessesand/or include different materials.

Accordingly, the semiconductor element 250 including the active layer130, the gate insulating layer 150, the gate electrode 170, theinterlayer insulating layer 190, the source electrode 210, and the drainelectrode 230 may be formed.

The planarization layer 270 may be formed on the source electrode 210and the drain electrode 230. The planarization layer 270 may cover thesource electrode 210 and the drain electrode 230. In particular, theplanarization layer 270 may be formed over the interlayer insulatinglayer 190. In the illustrated exemplary embodiment, the planarizationlayer 270 may have a relatively thick thickness to sufficiently coverthe source electrode 210 and the drain electrode 230. In this case, theplanarization layer 270 may have a substantially flat top surface. Inorder to form the planarization layer 270 having a substantially flattop surface, a planarization process may be additionally performed onthe planarization layer 270. In some exemplary embodiments, theplanarization layer 270 may be formed along a profile of the sourceelectrode 210 and the drain electrode 230 with a uniform thickness tocover the source electrode 210 and the drain electrode 230. Theplanarization layer 270 may be formed by using an organic material.

The lower electrode 290 may be formed on the planarization layer 270.The lower electrode 290 may be connected to the drain electrode 230through a contact hole formed by removing a portion of the planarizationlayer 270. In addition, the lower electrode 290 may be electricallyconnected to the semiconductor element 250. The lower electrode 290 mayby formed by using metal, an alloy, metal nitride, conductive metaloxide, a transparent conductive material, etc. These may be used aloneor in combination with each other. In other exemplary embodiments, thelower electrode 290 may have a multilayer structure including aplurality of metal layers. For example, the metal layers may havedifferent thicknesses and/or include different materials.

The pixel defining layer 310 may be formed on the planarization layer270 and expose a portion of a top surface of the lower electrode 290.The pixel defining layer 310 may be formed by using an organic material.

The light emitting layer 330 may be formed on the lower electrode 290,which is at least partially exposed. The light emitting layer 330 may beformed by using at least one of light emitting materials for emittingdifferent color lights (e.g., red light, green light, blue light, etc.)according to sub-pixels. Alternatively, the light emitting layer 330 maybe formed by laminating a plurality of light emitting materials foremitting different color lights, such as red light, green light, andblue light, to emit white light as a whole. In this case, a color filtermay be formed on the light emitting layer 330. The color filter mayinclude at least one of a red color filter, a green color filter, and ablue color filter. In some exemplary embodiments, the color filter mayby formed by using a yellow color filter, a cyan color filter, and amagenta color filter, for example. The color filter may include aphotosensitive resin or a color photoresist.

The upper electrode 340 may be formed on the pixel defining layer 310and the light emitting layer 330. The upper electrode 340 may be formedby using metal, an alloy, metal nitride, conductive metal oxide, atransparent conductive material, etc. In other exemplary embodiments,the upper electrode 340 may have a multilayer structure including aplurality of metal layers. For example, the metal layers may havedifferent thicknesses and/or include different materials.

Accordingly, the display structure 200 including the semiconductorelement 250, the planarization layer 270, the pixel defining layer 310,the lower electrode 290, the light emitting layer 330, and the upperelectrode 340 may be formed.

The pad electrodes 470 may be formed in the pad area 60 on the lowersubstrate 110. The pad electrodes 470 may be spaced apart from eachother in a first direction D1 parallel to a top surface of the lowersubstrate 110. As shown in FIG. 11, a portion where the pad electrodes470 are disposed may be defined as a first area 61, and a portion wherethe pad electrodes 470 are not disposed may be defined as a second area62.

The pad electrodes 470 may be formed by using metal, an alloy, metalnitride, conductive metal oxide, a transparent conductive material, etc.For example, pad electrodes 470 may include gold, silver, aluminum,platinum, nickel, titanium, palladium, magnesium, calcium, lithium,chromium, tantalum, tungsten, copper, molybdenum, scandium, neodymium,iridium, an aluminum-containing alloy, aluminum nitride, asilver-containing alloy, tungsten nitride, a copper-containing alloy, amolybdenum-containing alloy, titanium nitride, chromium nitride,tantalum nitride, strontium ruthenium oxide, zinc oxide, indium tinoxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, etc.These may be used alone or in combination with each other. In theillustrated exemplary embodiment, the pad electrodes 470 and the gateelectrode 170 and/or the source and drain electrodes 210 and 230 may besimultaneously formed by using the same material. In other exemplaryembodiments, each of the pad electrodes 470 may have a multilayerstructure including a plurality of metal layers. For example, the metallayers may have different thicknesses and/or include differentmaterials.

The insulating layer 460 may be formed in a portion of the pad area 60on the lower substrate 110. In particular, the insulating layer 460 maybe formed in the second area 62 on the lower substrate 110, and may notbe formed in the first area 61. In the illustrated exemplary embodiment,a top surface of the insulating layer 460 and a top surface of each ofthe pad electrodes 470 may be located at the same level. However, theinventive concepts are not limited thereto. For example, in otherexemplary embodiments, the insulating layer 460 may cover both sides ofeach of the pad electrodes 470, and the top surface of the insulatinglayer 460 may be located lower or higher than the top surface of each ofthe pad electrodes 470. The insulating layer 460 may be formed by usingan organic material. For example, the insulating layer 460 may include aphotoresist, a polyacryl-based resin, a polyimide-based resin, apolyamide-based resin, a siloxane-based resin, an acryl-based resin, anepoxy-based resin, etc. In the illustrated exemplary embodiment, theinsulating layer 460 and the planarization layer 270 may besimultaneously formed by using the same material.

Referring to FIG. 12, the upper substrate 410 may be provided. The uppersubstrate 410 may include substantially the same material as the lowersubstrate 110. For example, the upper substrate 410 may be formed byusing a quartz substrate, a synthetic quartz substrate, a calciumfluoride substrate, an F-doped quartz substrate, a soda lime glasssubstrate, a non-alkali glass substrate, etc.

The sealing member 450 may be formed on the bottom surface of the uppersubstrate 410. The sealing member 450 may be formed at an outermostportion of the upper substrate 410. The sealing member 450 may be formedby using a frit and the like. In addition, the sealing member 450 mayfurther include a photocurable material. For example, the sealing member450 may include a mixture of an organic material and a photocurablematerial.

After the sealing member 450 is formed on the bottom surface of theupper substrate 410, the upper substrate 410 may be placed on the lowersubstrate 110 and the display structure 200, such that the sealingmember 450 surrounds the display structure 200.

After the upper substrate 410 is placed on the lower substrate 110, thesealing member 450 may be irradiated with ultraviolet light, laserlight, visible light, or the like, so that the sealing member 450 may becured. For example, the laser light may be irradiated to the mixture,such that the mixture may be changed from a solid state to a liquidstate. Then, the mixture in the liquid state may be cured back to thesolid state after a predetermined time. As the state of the mixturechanges, the upper substrate 410 may be coupled to the lower substrate110 and seal the display structure 200.

Referring to FIG. 13, the conductive film member 600 may be provided.The conductive film member 600 may include an anisotropic conductingfilm (ACF). The conductive film member 600 may include the secondconductive balls 620 and a non-cured resin layer 635. The non-curedresin layer 635 may cover the second conductive balls 620. Each of thesecond conductive balls 620 may have substantially a circular shape whenviewed in a plan view, and the non-cured resin layer 635 may have afirst viscosity. In addition, the second conductive balls 620 may bearranged in the first direction D1 and the second direction D2 withinthe non-cured resin layer 635, and may be regularly spaced apart fromeach other at equidistant intervals. In particular, the secondconductive balls 620 may be arranged in only one layer in a latticeshape, and may not overlap each other in the third direction D3perpendicular to the first direction D1 and the second direction D2. Inexemplary embodiments, a thickness of the non-cured resin layer 635 inthe third direction D3 may be greater than the diameter of each of thesecond conductive balls 620, or may be less than twice the diameter ofeach of the second conductive balls 620.

For example, when the thickness of the non-cured resin layer 635 isrelatively large, a relatively large amount of the non-cured resin layer635 may be reflowed during a process of curing the non-cured resin layer635, which will be described in more later. In this case, thearrangement of the second conductive balls 620 located within thenon-cured resin layer 635 may be changed, and some of the secondconductive balls 620 may overlap each other in the third direction D3.As such, adjacent pad electrodes 470 may be short-circuited by thesecond conductive balls 620.

Accordingly, the thickness of the non-cured resin layer 635 may bedetermined depending on the amount of reflow.

Each of the second conductive balls 620 may have a structure, in which aspherical polymer is coated with a metal layer, such as nickel, cobalt,gold, silver, and copper. The non-cured resin layer 635 may be formed byusing a thermosetting resin. For example, the non-cured resin layer 635may include a non-cured epoxy resin, a non-cured amino resin, anon-cured phenol resin, a non-cured urea resin, a non-cured melamineresin, a non-cured unsaturated polyester resin, a non-cured polyurethaneresin, a non-cured polyimide resin, etc.

Referring to FIGS. 14 and 15, the conductive film member 600 includingthe second conductive balls 620 and the non-cured resin layer 635 may belocated on the pad electrodes 470 to overlap the pad electrodes 470.

Referring to FIGS. 16 and 17, the film package 500 may be located on theconductive film member 600. The film package 500 may include a printedcircuit board (PCB), a flexible printed circuit board (FPCB), or aflexible flat cable (FFC).

The film package 500 may include the base substrate 510 and the bumpelectrodes 520. The bump electrodes 520 may be formed on the bottomsurface of the base substrate 510 while being spaced apart from eachother. For example, the bump electrodes 520 may overlap the first area61 on the conductive film member 600, and the base substrate 510 may belocated in the first area 61 and the second area 62 on the bumpelectrodes 520. The base substrate 510 may be formed by using a flexiblefilm including a material having flexibility. For example, the basesubstrate 510 may include a polyimide resin, a polyester resin, etc. Thebump electrodes 520 may be formed by using metal, an alloy, metalnitride, conductive metal oxide, a transparent conductive material, etc.These may be used alone or in combination with each other. In otherexemplary embodiments, the bump electrodes 520 may have a multilayerstructure including a plurality of metal layers. For example, the metallayers may have different thicknesses and/or include differentmaterials.

Referring to FIGS. 18 and 19, a heating member 750 may make contact withthe top surface of the film package 500. The heating member 750 may beheated to a predetermined temperature, and may apply a pressure to theconductive film member 600 in the direction opposite to the thirddirection D3. In this case, as intervals between the bump electrodes 520and the pad electrodes 470 become narrow due to the pressure, a portionof the non-cured resin layer 635 located in the first area 61 may bereflowed into the second area 62, and the non-cured resin layer 635 maybe cured by the heat.

After the curing process is performed, the non-cured resin layer 635 isdefined as the film layer 630. As the intervals between the bumpelectrodes 520 and the pad electrodes 470 become narrow, the shapes ofthe second conductive balls 620 located in the first area 61 between thebump electrodes 520 and the pad electrodes 470 may be deformed from acircular shape into substantially an elliptical shape when viewed from aplan view. In this case, the second conductive balls 620 located in thefirst area 61 and having substantially the elliptical shape when viewedfrom a plan view are defined as the first conductive balls 610. Inaddition, at least a portion of each of the first conductive balls 610may be exposed from the film layer 630 in the first area 61, and theexposed portion of each of the first conductive balls 610 may makedirect contact with the bump electrodes 520 or the pad electrodes 470.

Accordingly, a thickness of the film layer 630 in the first area 61 maybe different from a thickness of the film layer 630 in the second area62. For example, the film layer 630 may have a first thickness in thefirst area 61, and may have a second thickness greater than the firstthickness in the second area 62. In addition, the film layer 630 maycover the second conductive balls 620 in the second area 62. Moreover,since a relatively small amount of the non-cured resin layer 635 isreflowed, the first conductive balls 610 and the second conductive balls620 may not overlap each other in the third direction D3 in the firstand second areas 61 and 62, and the top surface of the film layer 630may be spaced apart from the bottom surface of the base substrate 510 inthe second area 62. In particular, an empty space may be defined by thetop surface of the film layer 630, the both side surfaces of each of thebump electrodes 520, and the bottom surface of the base substrate 510 inthe second area 62. In some exemplary embodiments, a relatively largeamount of the film layer 630 located in the first area 61 may bereflowed, so that the film layer 630 may contact with a portion of thebottom surface of the base substrate 510. In addition, when the heatingmember 750 applies a relatively large pressure in the direction oppositeto the third direction D3, the diameter of each of the first conductiveballs 610 in the third direction D3 may be relatively reduced, or thefirst conductive balls 610 may penetrate each of the pad electrodes 470,so that the shape of the pad electrodes 470 may be deformed.

After the film layer 630 is formed, the heating member 750 may beremoved from the top surface of the film package 500.

Referring to FIG. 20, a resin 710 may be disposed in a portion of thepad area 60 on the insulating layer 460. The resin 710 may have a secondviscosity less than the first viscosity. In particular, the resin 710may be located on a side of the conductive film member 600 adjacent tothe sealing member 450, a side of the film package 500, a portion of aside surface of the base substrate 510, and the like. The resin 710 mayinclude a thermosetting resin or a photocurable resin. In theillustrated exemplary embodiment, the resin 710 may include aphotocurable resin. For example, the resin 710 may include an acrylresin, an epoxy resin, an epoxy acrylate resin, a polyester acrylateresin, a polyester urethane acrylate oligomer resin, a urethane acrylateresin, a urethane acrylate oligomer resin, a polybutadiene acrylateresin, a silicon acrylate resin, an alkyl acrylate resin, a vinyl phenolresin, a bismaleimide resin, a diallyl phthalate resin, etc.

Referring to FIGS. 6, 7 and 21, the resin 710 may penetrate into theempty space through a capillary phenomenon, and may be located in thesecond area 62. The resin 710 may be irradiated with ultraviolet (UV)light, laser light, visible light, or the like so as to be cured. Thecured resin 710 may be defined as the adhesive member 710. For example,the adhesive member 710 may make direct contact with the top surface ofthe film layer 630, the both side surfaces of each of the bumpelectrodes 520, and the bottom surface of the base substrate 510.

Accordingly, the display device 700 shown in FIGS. 6 and 7 may bemanufactured.

In the method of manufacturing the display device according to theexemplary embodiments, since the non-cured resin layer 635 is used, whenthe film package 500 applies the pressure to the conductive film member600 in the direction opposite to the third direction D3, the non-curedresin layer 635 located in the first area 61 may be reflowed into thesecond area 62, so that the non-cured resin layer 635 may expose atleast a portion of each of the first conductive balls 610 located in thefirst area 61, which may cause the bump electrodes 520 and the padelectrodes 470 to easily contact the first conductive balls 610directly. In this case, since a relatively small amount of the non-curedresin layer 635 is reflowed in the first area 61, the first conductiveballs 610 may not be moved, and a density of the first conductive balls610 may be relatively uniform in the first area 61. In addition, since arelatively small amount of the non-cured resin layer 635 is reflowedfrom the first area 61 to the second area 62, the second conductiveballs 620 may be not moved, and a density of the second conductive balls620 may be uniform in the second area 62.

Accordingly, adjacent pad electrodes 470 or the adjacent bump electrodes520 may not be short-circuited by the second conductive balls 620, andthe pad electrode 470 and the bump electrode 520, which overlap eachother, may be easily and electrically connected to each other. Inaddition, since the adhesive member 710 is disposed in the empty space,the film package 500 and the conductive film member 600 may be firmlyadhered to each other.

The inventive concepts may be applied to various display devices, suchas a vehicle-display device, a ship-display device, an aircraft-displaydevice, portable communication devices, display devices for display orfor information transfer, a medical-display device, etc.

According to the exemplary embodiments, the film package of a displaydevice has a relatively thin thickness, so that adjacent pad electrodesor adjacent bump electrodes may not be short-circuited by the conductiveballs, and the pad electrode and the bump electrode that overlap eachother may be easily and electrically connected to each other. Inaddition, since the display device includes the adhesive member,adhesive strength between the film package and the conductive filmmember may be relatively increased.

In the method of manufacturing the display device according to exemplaryembodiments, since the non-cured resin layer is used, when the filmpackage applies the pressure to the conductive film member in thedirection opposite to the third direction, the non-cured resin layerdisposed in the first area may be reflowed into the second area, suchthat the non-cured resin layer may expose at least a portion of each ofthe first conductive balls disposed in the first area, and the bumpelectrodes and the pad electrodes may easily make direct contact withthe first conductive balls. In this case, since a relatively smallamount of the non-cured resin layer is reflowed in the first area, thefirst conductive balls may not be moved, and a density of the firstconductive balls may be relatively uniform in the first area. Inaddition, since a relatively small amount of the non-cured resin layeris reflowed from the first area to the second area, the secondconductive balls may not be moved, and a density of the secondconductive balls may be uniform in the second area.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concepts are notlimited to such embodiments, but rather to the broader scope of theappended claims and various obvious modifications and equivalentarrangements as would be apparent to a person of ordinary skill in theart.

What is claimed is:
 1. A method of manufacturing a display device, themethod comprising: providing a lower substrate having a display area anda pad area; forming a display structure in the display area of the lowersubstrate; forming pad electrodes in the pad area of the lower substrateto be spaced apart from each other in a first direction parallel to atop surface of the lower substrate; forming an upper substrate on thedisplay structure to face the lower substrate in the display area;forming a conductive film member including a non-cured resin layer andconductive balls arranged in a lattice shape on the pad electrodes, thenon-cured resin layer overlapping the pad electrodes; and forming a filmpackage on the non-cured resin layer, the film package including bumpelectrodes overlapping the pad electrodes.
 2. The method of claim 1,wherein the conductive balls are arranged in the first direction and asecond direction orthogonal to the first direction, and are spaced apartfrom each other at equidistant intervals.
 3. The method of claim 1,further comprising: placing a heating member to contact a top surface ofthe film package; applying heat and a pressure to the top surface of thefilm package; and curing the non-cured resin layer to form a cured-resinlayer.
 4. The method of claim 3, wherein the pressure applied to the topsurface of the film package reduces intervals between the pad electrodesand the bump electrodes, such that a shape of each of the conductiveballs disposed between the pad electrodes and the bump electrodes isdeformed.
 5. The method of claim 3, wherein: the cured-resin layer atleast partially covers the conductive balls; the cured-resin layer has afirst area where the pad electrodes overlap the bump electrodes, and asecond area where the pad electrodes do not overlap the bump electrodes;the cured-resin layer disposed in the first area has a first thicknessand exposes at least a portion of each of the conductive balls disposedin the first area; and the cured-resin layer disposed in the second areahas a second thickness greater than the first thickness and covers theconductive balls disposed in the second area.
 6. The method of claim 5,wherein: the conductive balls include: first conductive balls disposedin the first area; and second conductive balls disposed in the secondarea; and a diameter of each of the first conductive balls in a firstdirection from the film package to the pad electrode is less than adiameter of each of the second conductive balls in the first direction.7. The method of claim 5, wherein the conductive balls do not overlapeach other in a first direction from the film package to the padelectrode in each of the first and second areas.
 8. The method of claim5, further comprising: placing a resin on one side of the padelectrodes; forming the resin in the second area; and curing the resin.9. The method of claim 8, wherein: the resin disposed on the one side ofthe pad electrodes penetrates into the second area through a capillaryphenomenon, and the resin includes a photo-curable resin.